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MTD6P10E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 100 Vdc, V GS = 0 Vdc)
(V DS = 100 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
100
?
?
?
?
?
124
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 3.0 Adc)
Drain ? Source On ? Voltage (V GS = 10 Vdc)
(I D = 6.0 Adc)
(I D = 3.0 Adc, T J = 125 ° C)
Forward Transconductance (V DS = 15 Vdc, I D = 3.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
1.5
2.9
4.0
0.56
3.6
?
3.0
4.0
?
0.66
4.8
4.2
?
Vdc
mV/ ° C
W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
550
840
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
154
27
240
56
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
12
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 50 Vdc, I D = 6.0 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
29
18
9
60
40
20
Gate Charge (See Figure 8)
(V DS = 80 Vdc, I D = 6.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
15.3
4.1
7.1
6.8
22
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 3)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(I S = 6.0 Adc, V GS = 0 Vdc)
(I S = 6.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 6.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.8
1.5
112
92
20
0.603
5.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
7.5
?
?
nH
nH
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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